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| Reflective Photosensors (Photo Reflectors) CNB1001, CNB1002 Reflective Photosensors Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. 1 4.30.3 2.7 0.35 3.4 1.8 3 C0.5 Chip center Unit : mm 0.15 0.05+0.1 -0.05 Features Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 x 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used 2 4-0.7 4 4-0.5 0.85 1.5 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 IC VCEO VECO PC *2 Unit V mA mW mA V V mW C C *1 6 50 75 20 35 6 75 -25 to +85 Topr Tstg - 40 to +100 Electrical Characteristics (Ta = 25C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC*1 IF = 20mA VR = 3V VCE = 20V VCC = 2V, IF = 4mA. RL = 100, d = 1mm VCC = 2V, IF = 4mA, RL = 100 IF = 20mA, IC = 0.1mA VCC = 5V, IC = 0.1mA, RL = 1000 30 40 23 Conditions min typ 1.2 max 1.4 10 100 160 100 0.4 Unit V A nA A nA V s Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2 *1 Output Current (IC) measurement method (see figure below.) Glass plate Evaporated Al d = 1mm *2 Response time measurement circuit (see figure below.) tr : Rise time Glass plate tf : Fall time Evaporated Al d = 1mm Sig.IN 90% 10% ,,, IF RL Input and output are handled electrically. This product is not designed to withstand radiation. ,, ,,, , IC VCC Sig.IN 50 RL Sig. Sig.OUT OUT V CC ,, ,, ,, 23 4 Pin connection 1: Anode 3: Emitter 2: Cathode 4: Collector 1 41 2 Pin connection 1: Emitter 3: Anode 2: Collector 4: Cathode 3 (Note) Tolerance unless otherwise specified is 0.2 CNB1001 CNB1002 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Color indication of classifications Class Q R S IC (A) 23 to 50 41 to 90 74 to 160 Color Orange White Light blue , ,,, ,,, ,,, , ,,, ,,, ,, tr tf 1 CNB1001,CNB1002 Reflective Photosensors (Photo Reflectors) IF , IC -- Ta 60 60 IF -- VF 800 Ta = 25C IC -- IF VCC = 5V Ta = 25C RL = 100 d = 1mm IF , IC (mA) 50 IF 50 IF (mA) IC (A) Collector current 600 Forward current, collector current 40 40 30 IC Forward current 30 400 20 20 200 10 10 0 - 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 8 16 24 Ambient temperature Ta (C ) Forward voltage VF (V) Forward current IF (mA) VF -- Ta 1.6 600 IC -- VCE 160 d = 1mm Ta = 25C IC -- Ta VCC = 2V IF = 4mA RL = 100 120 VF (V) 1.2 10mA 1mA 0.8 IC (A) IF = 20mA 400 15mA 300 10mA 8mA 100 6mA 4mA Relative output current Forward voltage Collector current IC (%) IF = 50mA 500 80 200 0.4 40 0 - 40 - 20 0 20 40 60 80 100 0 2mA 0 1 2 3 4 5 6 7 8 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Ambient temperature Ta (C ) ICEO -- Ta 10 VCE = 10V 10 3 tr , tf -- IC 100 VCC = 5V Ta = 25C : tr : tf 10 2 RL = 2k IC -- d VCE = 2V Ta = 25C IF = 4mA IC (%) tr , tf (s) 1 80 Rise time , fall time 10 -1 Relative output current 60 1k 10 100 Dark current 10 -2 40 1 10 -3 20 10 -4 - 40 - 20 0 20 40 60 80 100 10-1 10 -2 10 -1 1 10 0 0 2 Ambient temperature Ta (C ) Collector current IC (mA) Distance d (mm) 2 , , d 4 6 8 10 ICEO (A) |
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